Gallium Nitride Semiconductor Devices Market Report

Gallium Nitride Semiconductor Devices Market Report

Gallium Nitride Semiconductor Devices Market Report
Report code - SR3317 Delivery - 2 Weeks
Gallium Nitride Semiconductor Devices Market Size, Share, Trend, Forecast, Competitive Ana See more...

Attractive Opportunities

Global Demand Analysis & Sales Opportunities in Gallium Nitride Semiconductor Devices Market 

  • The annual demand for gallium nitride semiconductor devices was USD 3.1 billion in 2024 and is expected to reach USD 4.0 billion in 2025, up 27.9% than the value in 2024.
  • During the next 8 years (forecast period of 2025-2032), the gallium nitride semiconductor devices market is expected to grow at a CAGR of 27.1%. The annual demand will reach USD 21.2 billion in 2032, which is more than 5 times the demand in 2025.
  • During 2025-2032, the gallium nitride semiconductor devices industry is expected to generate a cumulative sales opportunity of USD 85.4 billion, which is more than 8 times the opportunities during 2019-2024.

High-Growth Market Segments: 

  • North America is expected to be the fastest-growing market during the forecast period.
  • By product type, GaN Radio Frequency Devices segment is anticipated to experience the fastest growth in the future.
  • By component type, Rectifier segment is expected to be the largest gallium nitride semiconductor devices market segment during the forecast period.
  • By wafer size type, 6-inch segment is anticipated to grow at the highest CAGR during the forecast period.
  • By end-use type, Defense & Aerospace segment is anticipated to hold the highest market share during the forecast period.

 

Market Statistics 

Have a look at the sales opportunities presented by the gallium nitride semiconductor devices market in terms of growth and market forecast.

Gallium Nitride Semiconductor Devices Market Data & Statistics

 

Market Statistics

Value (in USD Billion)

Market Growth (%)

Annual Market Size in 2023

USD 2.4 billion

-

Annual Market Size in 2024

USD 3.1 billion

YoY Growth in 2024: 27.6%

Annual Market Size in 2025

USD 4.0 billion

YoY Growth in 2025: 27.9%

Annual Market Size in 2032

USD 21.2 billion

CAGR 2025-2032: 27.1%

Cumulative Sales Opportunity during 2025-2032

USD 85.4 billion

  •  

Top 10 Countries’ Market Share in 2024

USD 2.5 billion +

> 80%

Top 10 Company’s Market Share in 2024

USD 1.5 billion to USD 2.2 billion

 50% - 70%

Market Dynamics

 

Introduction:

What are Gallium Nitride Semiconductor Devices (GaN)?

Gallium Nitride (GaN) Semiconductor Devices are a type of power semiconductor device that utilizes gallium nitride as the material for creating high-performance electronic components. GaN is a wide-bandgap semiconductor material, which means it has certain properties that make it ideal for applications requiring high power, high frequency, and high efficiency.

 

Market Drivers: 

Expansion of 5G Networks and Advanced Telecommunications

  • The global deployment of 5G networks is a major growth driver for GaN semiconductors, especially in high-frequency and high-power applications.
  • GaN’s unique ability to deliver efficient performance at high power and frequencies is essential for next-generation 5G base stations, RF amplifiers, and radar systems.
  • As telecom companies scale up infrastructure to meet growing data demands, GaN devices enable faster speeds, greater bandwidth, and more reliable service. This surge in demand for 5G technology is fueling substantial growth in the GaN semiconductor market, particularly in the telecommunications sector.

 

Market Challenges: 

Supply Chain and Material Availability

  • One of the significant challenges faced by the GaN semiconductor market is the supply chain and material availability. GaN is a relatively complex material to manufacture compared to traditional silicon, and its production requires specialized equipment and processes.
  • As the demand for GaN devices grows, there is pressure on the supply chain to meet these requirements at scale. Additionally, GaN wafers are often sourced from a limited number of suppliers, which can result in supply bottlenecks.
  • Moreover, producing high-quality GaN substrates involves overcoming issues like material defects and crystal lattice mismatches, which complicate mass production and increase costs.
  • The global supply chain for GaN is still developing, and ensuring a consistent, high-quality supply of GaN wafers is essential to meet the growing demand in industries like electric vehicles, telecommunications, and power electronics.

High Production Costs and Capital Investment

  • Another challenge faced by the GaN semiconductor market is the high production costs and capital investment required for manufacturing GaN devices.
  • GaN wafers are more expensive to produce than silicon, and the fabrication process involves advanced technology that can be costly to implement. The equipment and facilities required to manufacture GaN semiconductors, such as specialized reactors for epitaxial growth, are also capital-intensive.
  • As a result, the initial setup costs can be prohibitive for many companies, limiting the number of players that can enter the GaN market. This high-cost structure could slow the widespread adoption of GaN devices, especially in cost-sensitive industries or applications.

 

Market Opportunities: 

Surge in Electric Vehicle (EV) Adoption

  • The ongoing transition towards electric vehicles presents a significant market opportunity for GaN semiconductors. As the automotive industry advances toward higher efficiency, lighter designs, and faster charging capabilities, GaN's superior performance in power conversion and thermal management has made it the preferred material for key electric vehicle (EV) components, including powertrains, battery management systems, and fast chargers.
  • The global shift towards sustainable mobility and electrification is expected to drive widespread adoption of GaN technologies across the EV sector, positioning the GaN semiconductor market for substantial growth in the near future.
  • This increasing reliance on GaN in electric vehicles (EVs) represents a compelling growth opportunity for stakeholders in the semiconductor and automotive industries.

Segments' Analysis

Segmentations

List of Sub-Segments

Segments with High-Growth Opportunity

Product Analysis

GaN Radio Frequency Devices, Opto-Semiconductors, Power Semiconductors

GaN Radio Frequency Devices segment is anticipated to experience the fastest growth in the future.

Component Analysis

Transistor, Diode, Rectifier, Power IC, Others

Rectifier segment is expected to be the largest gallium nitride semiconductor devices market segment during the forecast period.

Wafer Size Analysis

2-inch, 4-inch, 6-inch, 8-inch

6-inch segment is anticipated to grow at the highest CAGR during the forecast period.

End-Use Analysis

Automotive, Consumer Electronics, Defense & Aerospace, Information & Communication Technology, Industrial & Power, Others

Defense & Aerospace segment is anticipated to hold the highest market share during the forecast period.

Regional Analysis

North America, Europe, Asia-Pacific, and The Rest of the World

North America is expected to be the fastest-growing market during the forecast period.

By Product Type

GaN Radio Frequency Devices segment is anticipated to experience the fastest growth in the future.”

  • The GaN radio frequency devices segment is expected to grow significantly due to the rising adoption of Gallium Nitride RF devices across various industries, including consumer electronics and defense, which have been early adopters.
  • These devices are also utilized in Improvised Explosive Devices (IEDs) because they provide high performance at relatively moderate costs, further boosting segment growth.
  • Additionally, high-frequency GaN devices are increasingly being integrated into vehicular communication systems and vehicle-to-grid communication systems in electric vehicles, driving further demand.

By Component Type

Rectifier segment is expected to be the largest gallium nitride semiconductor devices market segment during the forecast period.”

  • The rectifier segment is projected to experience the highest compound annual growth rate during the forecast period due to the increasing demand for high-efficiency power conversion solutions across industries such as automotive, consumer electronics, and telecommunications.
  • GaN rectifiers offer reduced conduction and switching losses, leading to improved energy efficiency and minimized power dissipation. These benefits result in lower operating costs and enhanced overall system performance, especially in high-power and high-frequency applications where efficiency is critical.
  • Additionally, GaN rectifiers deliver faster switching speeds and higher breakdown voltages, allowing them to operate at elevated frequencies and handle higher voltages with greater reliability.

Regional Analysis

North America is estimated to be the largest market during the forecast period.

  • North America is projected to be the fastest-growing region in the Gallium Nitride Semiconductor Devices market, because of increasing investments in research and development from the defense and aerospace sectors.
  • Additionally, government funding for semiconductor companies is expected to further boost growth.
  • Companies in North America are also focused on securing commercialization rights for various GaN-on-Si patents.

Competitive Landscape

Most of the major players compete in some of the factors, including price, service offerings, regional presence, etc. The following are the key players in the gallium nitride semiconductor devices market -  

  • Fujitsu Ltd.
  • Efficient Power Conversion Corporation
  • Transphorm, Inc.
  • Infineon Technologies AG
  • NXP Semiconductors.
  • Qorvo, Inc
  • Texas Instruments Incorporated.
  • Toshiba Corporation
  • GaN Systems
  • NTT Advanced Technology Corporation

Note: The above list does not necessarily include all the top players in the market.

Are you a leading player in this market? We would love to include your name. Please write to us at [email protected]

 

Recent Developments/Mergers & Acquisitions:

  • In April 2024, Transphorm, Inc., a GaN power semiconductor company, and Weltrend Semiconductor Inc. declared the release of two new GaN System-in-Packages (SiPs). The new additions, which include the WT7162RHUG24C and WT7162RHUG24B, integrate Weltrend's high-frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm's 480 mΩ and 150 mΩ SuperGaN FETs, respectively. This partnership is an extension of Weltrend's best-selling GaN SiP released last year, collectively forming the first SiP product family based on Transphorm's SuperGaN platform.
  • In March 2024, Efficient Power Conversion Corporation launched EPC2361, a groundbreaking gallium nitride (GaN) field-effect transistor (FET) boasting the lowest on-resistance on the market at 100V, 1mΩ. This innovation promises to double the power density when compared to EPC's previous-generation products. The EPC2361 exhibits an impressive typical RDS (on) of only 1mΩ, housed in a thermally enhanced QFN package with an exposed top, occupying a mere footprint of 3mm x 5mm.
  • In January 2024, Transphorm Inc. launched two new 650V SuperGaN devices packaged in a 4-lead TO-247 package (TO-247-4L). These new FETs, named TP65H035G4YS and TP65H050G4YS, boast on-resistances of 35mΩ and 50mΩ, respectively, featuring a Kelvin-source terminal that enables customers to achieve versatile switching capabilities with reduced energy losses.

Report Features

This report provides market intelligence most comprehensively. The report structure has been kept so that it offers maximum business value. It provides critical insights into market dynamics and will enable strategic decision-making for existing market players as well as those willing to enter the market.

The following are the key features of the report:

  • Market structure: Overview, industry life cycle analysis, supply chain analysis.
  • Market environment analysis: Growth drivers and constraints, Porter’s five forces analysis, SWOT analysis.
  • Market trend and forecast analysis.
  • Market segment trend and forecast.
  • Competitive landscape and dynamics: Market share, Service portfolio, New Product Launches, etc.
  • COVID-19 impact and its recovery curve.
  • Attractive market segments and associated growth opportunities.
  • Emerging trends.
  • Strategic growth opportunities for the existing and new players.
  • Key success factors.

Market Study Period

2019-2032

Base Year

2024

Forecast Period

2025-2032

Trend Period

2019-2023

Number of Tables & Figures

>100

Number of Segments Analysed

5 (Component Type, End-Use Type, Wafer Size Type, Product Type, and Region)

Number of Regions Analysed

4 (North America, Europe, Asia-Pacific, Rest of the World)

Countries Analysed

15 (The USA, Canada, Mexico, Germany, France, Italy, The UK, China, Japan, India, Brazil, Saudi Arabia, Rest of Europe, Rest of APAC, and Rest of the World)

Free Customization Offered

10%

After Sales Support

Unlimited

Report Presentation

Complimentary

Market Dataset

Complimentary

Further Deep Dive & Consulting Services

10% Discount

 

Market Segmentation 

This report studies the market, covering a period of 15 years of trend and forecast. The report provides detailed insights into the market dynamics to enable informed business decision-making and growth strategy formulation based on the opportunities present in the market.

The global gallium nitride semiconductor devices market is segmented into the following categories. 

Global Gallium Nitride Semiconductor Devices Market, by Product Type

  • GaN Radio Frequency Devices
  • Opto-Semiconductors
  • Power Semiconductors

Global Gallium Nitride Semiconductor Devices Market, by Component Type

  • Transistor
  • Diode
  • Rectifier
  • Power IC
  • Others

Global Gallium Nitride Semiconductor Devices Market, by Wafer Size Type

  • 2-inch
  • 4-inch
  • 6-inch
  • 8-inch

Global Gallium Nitride Semiconductor Devices Market, by End-Use

  • Automotive
  • Consumer Electronics
  • Defense & Aerospace
  • Information & Communication Technology (ICT)
  • Industrial & Power
  • Others

Global Gallium Nitride Semiconductor Devices Market, by Region

  • North America (Country Analysis: The USA, Canada, and Mexico)
  • Europe (Country Analysis: Germany, France, Italy, The UK, and Rest of Europe)
  • Asia-Pacific (Country Analysis: Japan, China, India, and Rest of Asia-Pacific)
  • Rest of the World (Country Analysis: Brazil, Saudi Arabia, and Others)

Research Methodology

  • This strategic assessment report from Stratview Research provides a comprehensive analysis that reflects today’s global gallium nitride semiconductor devices market realities and future market possibilities for the forecast period. 
  • The report segments and analyzes the market in the most detailed manner to provide a panoramic view of the market.
  • The vital data/information provided in the report can play a crucial role for market participants and investors in identifying the low-hanging fruits available in the market and formulating growth strategies to expedite their growth process.
  • This report offers high-quality insights and is the outcome of a detailed research methodology comprising extensive secondary research, rigorous primary interviews with industry stakeholders, and validation and triangulation with Stratview Research’s internal database and statistical tools.
  • More than 1,000 authenticated secondary sources, such as company annual reports, fact books, press releases, journals, investor presentations, white papers, patents, and articles, have been leveraged to gather the data.
  • We conducted more than 3.1 detailed primary interviews with market players across the value chain in all four regions and industry experts to obtain both qualitative and quantitative insights.

Customization Options

With this detailed report, Stratview Research offers one of the following free customization options to our respected clients:

Company Profiling

  • Detailed profiling of additional market players (up to three players)
  • SWOT analysis of key players (up to three players)

Competitive Benchmarking

  • Benchmarking of key players on the following parameters: Service portfolio, geographical reach, regional presence, and strategic alliances

Custom Research: Stratview Research offers custom research services across industries. In case of any custom research requirement related to market assessment, competitive benchmarking, sourcing and procurement, target screening, and others, please send your inquiry to [email protected]

Frequently Asked Questions (FAQ)

The global Gallium Nitride (GaN) semiconductor devices market refers to the market for electronic components made from Gallium Nitride, a wide-bandgap semiconductor material. GaN semiconductors are known for their high efficiency, fast switching speeds, and ability to operate at high power levels and temperatures, making them ideal for applications in power electronics, telecommunications, automotive, and consumer electronics.

The forecasted value for the market is US$ 21.2 billion in 2032.

Gallium nitride semiconductor devices market size was USD 3.1 billion in 2024 and is expected to grow from USD 4.0 billion in 2025 to USD 21.2 billion in 2032, witnessing an impressive market growth (CAGR) of 27.1% during the forecast period (2025-2032).

The key drivers of the global gallium nitride semiconductor devices market are the expansion of 5G networks and advanced telecommunications, and a surge in electric vehicle adoption.

The top players in the global gallium nitride semiconductor devices market include Fujitsu Ltd., Efficient Power Conversion Corporation, Transphorm, Inc., Infineon Technologies AG, NXP Semiconductors, etc.

The North American region is the fastest-growing market for global gallium nitride semiconductor devices.